Abstract: The accelerating global transition toward decarbonized power systems demands high-voltage direct-current (HVDC) transmission and flexible alternating-current transmission system (FACTS) technologies with superior efficiency and power density. Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) present transformative potential for these applications owing to their wide bandgap (3.26 eV), high critical electric field (2.5 MV/cm), and elevated thermal conductivity (4.9 W/cm·K). However, the dynamic switching behavior of SiC-MOSFETs within multi-level converter topologies under high-voltage operating conditions remains insufficiently characterized in existing literature. This paper presents a comprehensive analysis of the switching transient dynamics—including turn-on and turn-off mechanisms, dv/dt and di/dt profiles, Miller plateau effects, and reverse recovery phenomena—of SiC-MOSFETs operating in three-level Neutral-Point-Clamped (NPC), five-level Active NPC (ANPC), Flying Capacitor Multi-Level (FCML), and Modular Multilevel Converter (MMC) topologies. A systematic switching characterization methodology is proposed and validated through double-pulse test (DPT) simulations using calibrated manufacturer device models. Results demonstrate that SiC-based multi-level converters achieve switching loss reductions of 68–78% compared to Silicon Insulated-Gate Bipolar Transistor (Si-IGBT) counterparts, enable switching frequencies up to 100 kHz with converter efficiencies exceeding 99.1%, and produce output voltage total harmonic distortion (THD) below 2.1% at rated load. Thermal analysis confirms stable junction temperature operation within safe margins at ambient temperatures up to 55°C. The findings establish quantitative design guidelines for deploying SiC multi-level converters in next-generation smart grid infrastructure.
Keywords: Silicon Carbide (SiC), MOSFET, multi-level converter, switching losses, wide-bandgap semiconductors, HVDC, smart grid, Neutral-Point-Clamped (NPC), Modular Multilevel Converter (MMC), power electronics.
Title: Dynamic Switching Characteristics Analysis of Multi-Level SiC-MOSFET Converters for High-Voltage Smart Power Transmission Grids
Author: Latifa K. Aldabbous
International Journal of Electrical and Electronics Research
ISSN 2348-6988 (online)
Vol. 14, Issue 2, April 2026 - June 2026
Page No: 15-36
Research Publish Journals
Website: www.researchpublish.com
Published Date: 08-May-2026
