Abstract: In this paper the electronic characteristics of double gate graphene nanoribbon field effect transistor (GNRFET) at wide range of temperatures are evaluated. Temperature is varied from 250 to 450 ° K. The simulations are performed by the self-consistent solution of Poisson–Schrödinger equations, within the non-equilibrium Green’s function (NEGF) formalism. A loop between these two equation is required. Different parameters of GNRFETs like saturation current, leakage current, sub-threshold swing, threshold voltage and current ration are evaluated in wide range of temperatures. Simulation results show that device threshold voltage decreases and sub-threshold swing increases at high temperatures. The results show that there is a linear relation between sub-threshold swing and temperature. Also, Saturation current is improved at high temperatures but at a same time the leakage current characteristic is damaged by applying higher temperatures. Decrease in leakage current is more noticeable than increase in saturation current thus the device current ratio decreases at high temperatures.
Keywords: GNRFET, temperature variations, NEGF, subthreshold swing, current ratio, leakage current.
Title: Evaluation of Electronic Characteristics of Double Gate Graphene Nanoribbon Field Effect Transistor for Wide Range of Temperatures
Author: MiladAbtin, Ali Naderi
International Journal of Electrical and Electronics Research
ISSN 2348-6988 (online)
Research Publish Journals
